4H-SiC MOSFETs Using Thermal Oxidized Ta2Si Films as High-k Gate Dielectric

4H-SiC MOSFETs Using Thermal Oxidized Ta2Si Films as High-k Gate Dielectric

Author(s):

Publication title:

Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy

Title of ser.:

Materials science forum

Ser. no.:

483-485

Pub. Year:

2005

Page(from):

713

Page(to):

716

Pages:

4

Pub. info.:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499632 [0878499636]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00014242
Series ID:	PA00000012
Conf. info. (Name):	ECSCRM : European Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2004 : 5th
Conf. info. (Venue):	Bologna, Italy
Conf. info. (Date):	2004.08.31-2004.09.04

Similar Items:

1 Conference Proceedings 4H-SiC MIS Structures Using Oxidized Ta2Si as High-k Dielectric Perez-Tomas, A., Godignon, P., Mestres, N., Tournier, D., Montserrat, J., Millan, J. Materials Research Society	7 Conference Proceedings SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps A. Perez-Tomas, M.R. Jennings, P.A. Mawby, J.A. Covington, P. Godignon, J. Millan, N. Mestres Trans Tech Publications
2 Conference Proceedings 4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N2O Perez-Tomas, A., Tournier, D., Godignon, P., Mestres, N., Millan, J. Trans Tech Publications	8 Conference Proceedings Design of Digital Electronics for High Temperature Using Basic Logic Gates Made of 4H-SiC MESFETs M. Alexandru, V. Banu, M. Vellvehi, P. Godignon, J. Millan Trans Tech Publications
3 Conference Proceedings Improved 4H-SiC N-MOSFET Interface Passivation by Combining N₂O Oxidation with Boron Diffusion M. Cabello, V. Soler, N. Mestres, J. Montserrat, J. Rebollo, J. Millán, P. Godignon Trans Tech Publications	9 Conference Proceedings SiC on SOI Resonators: A Route for Electrically Driven MEMS in Harsh Environment M. Placidi, A. Pérez-Tomás, P. Godignon, N. Mestres, G. Abadal Trans Tech Publications
4 Conference Proceedings Electrical Characterization of Deposited and Oxidized Ta2Si as Dielectric Film for SiC Metal-Insulator-Semiconductor Structures Perez, A., Tournier, D., Montserrat, J., Mestres, N., Sandiumenge, F., Millan, J. Trans Tech Publications	10 Conference Proceedings Temperature Dependence of 4H-SiC JBS and Schottky Diodes after High Temperature Treatment of Contact Metal Perez, R., Mestres, N., Tournier, D., Jorda, X., Vellvehi, M., Godignon, P. Trans Tech Publications
5 Conference Proceedings Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta2Si/4H-SiC High-k MOSFETs Measured in Strong Inversion Perez-Tomas, A., Vellvehi, M., Mestres, N., Millan, J., Vennegues, P., Stoemenos, J. Trans Tech Publications	11 Conference Proceedings New Diode Designs Compatible with Vertical 4H-SiC JFET Fabrication Process P. Brosselard, D. Tournier, M. Vellvehi, J. Montserrat, P. Godignon, J. Millan Trans Tech Publications
6 Conference Proceedings PECVD Deposited TEOS for Field-Effect Mobility Improvement in 4H-SiC MOSFETs on the (0001) and (11-20) Faces Perez-Tomas, A., Godignon, P., Camassel, J., Mestres, N., Souliere, V. Trans Tech Publications	12 Conference Proceedings Functional Oxide as an Extreme High-k Dielectric towards 4H-SiC MOSFET Incorporation S.A.O. Russell, M.R. Jennings, T.X. Dai, F. Li, D.P. Hamilton, C.A. Fisher, Y.K. Sharma, P.A. Mawby, A. Pérez-Tomás Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12