Ab Initio Study of Dopant Interstitials in 4H-SiC
- Author(s):
- Publication title:
- Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy
- Title of ser.:
- Materials science forum
- Ser. no.:
- 483-485
- Pub. Year:
- 2005
- Page(from):
- 523
- Page(to):
- 526
- Pages:
- 4
- Pub. info.:
- Uetikon-Zuerich: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878499632 [0878499636]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
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