Blank Cover Image

Ab Initio Study of Dopant Interstitials in 4H-SiC

Author(s):
Publication title:
Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy
Title of ser.:
Materials science forum
Ser. no.:
483-485
Pub. date:
2005
Page(from):
523
Page(to):
526
Pages:
4
Pub. info.:
Uetikon-Zuerich: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878499632 [0878499636]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

Similar Items:

Bockstedte, M., Mattausch, A., Pankratov, O.

Trans Tech Publications

7 Conference Proceedings Boron in SiC: Structure and Kinetics

Bockstedte, M., Mattausch, A., Pankratov, O.

Trans Tech Publications

Mattausch, A., Bockstedte, M., Pankratov, O.

Trans Tech Publications

Bockstedte, M., Mattausch, A., Pankratov, O.

Trans Tech Publications

Mattausch, A., Bockstedte, M., Pankratov, O.

Trans Tech Publications

Mattausch, A., Bockstedte, M., Pankratov, O.

Trans Tech Publications

Bockstedte, M., Mattausch, A., Pankratov, O.

Trans Tech Publications

A. Mattausch, O. Pankratov

Trans Tech Publications

Mattausch, A., Bockstedte, M., Pankratov, O.

Trans Tech Publications

A. Mattausch, T. Dannecker, O. Pankratov

Trans Tech Publications

Bockstedte, M., Pankratov, O.

Trans Tech Publications

Bockstedte, M., Heid, M., Mattausch, A., Pankratov, O.

Trans Tech Publications

1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12