Excitation Power Dependence of Al-Related Features in the LTPL Spectra of 4H-SiC

Excitation Power Dependence of Al-Related Features in the LTPL Spectra of 4H-SiC

Author(s):

Zielinski, M.

Publication title:

Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy

Title of ser.:

Materials science forum

Ser. no.:

483-485

Pub. Year:

2005

Page(from):

449

Page(to):

452

Pages:

4

Pub. info.:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499632 [0878499636]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00014242
Series ID:	PA00000012
Conf. info. (Name):	ECSCRM : European Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2004 : 5th
Conf. info. (Venue):	Bologna, Italy
Conf. info. (Date):	2004.08.31-2004.09.04

Similar Items:

1 Conference Proceedings Dilute Aluminium Concentration in 4H-SiC: from SIMS to LTPL Measurements Juillaguet, S., Zielinski, M., Balloud, C., Sartel, C., Consejo, C., Boyer, B., Souliere, V., Camassel, J., Monteil, Y. Trans Tech Publications	7 Conference Proceedings Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped α-SiC Substrates Grown by the M-PVT Method Contreras, S., Zielinski, M., Konczewicz, L., Blanc, C., Juillaguet, S., Muller, R., Kunecke, U., Wellmann, P.J., … Trans Tech Publications
2 Conference Proceedings Evaluation of p-Type Doping for (1120) Epitaxial Layers Grown on α-Cut (1120) 4H-SiC Substrates Blanc, C., Zielinski, M., Souliere, V., Sartel, C., Juillaguet, S., Contreras, S., Camassel, J., Monteil, Y. Trans Tech Publications	8 Conference Proceedings Investigation of <1,1,-2,0> Epitaxial Layers Grown on a-Cut 4H-SiC Substrates Blanc, C., Sartel, C., Souliere, V., Juillaguet, S., Monteil, Y., Camassel, J. Trans Tech Publications
3 Conference Proceedings Comparative Studies of <0001> 4H-SiC Layers Grown with Either Silane or HexaMethylDisilane / Propane Precursor Systems Sartel, C., Balloud, C., Souliere, V., Juillaguet, S., Dazord, J., Monteil, Y., Camassel, J., Rushworth, S. Trans Tech Publications	9 Conference Proceedings Characterization of Bulk <> 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT Method Latu-Romain, L., Chaussende, D., Balloud, C., Juillaguet, S., Rapenne, L., Pernot, E., Camassel, J., Pons, M., Madar, R. Trans Tech Publications
4 Conference Proceedings Optical Investigation of Stacking Faults and Micro-Crystalline Inclusions In-Low-Doped 4H-SiC Layers Juillaguet, S., Balloud, C., Pernot, J., Sartel, C., Souliere, V., Camassel, J., Monteil, Y. Trans Tech Publications	10 Conference Proceedings Growth and Characterisation of Heavily Al-Doped 4H-SiC Layers Grown by VLS in an Al-Si Melt Jacquier, C., Ferro, G., Balloud, C., Zielinski, M., Camassel, J., Polychroniadis, E., Stoemenos, J., Cauwet, F., … Trans Tech Publications
5 Conference Proceedings Aluminum Doping of 4H-SiC Grown with HexaMethylDiSilane Sartel, C., Souliere, V., Zielinski, M., Monteil, Y., Camassel, J., Rushworth, S. Trans Tech Publications	11 Conference Proceedings Intensity Ratio of the Doublet Signature of Excitons Bound to 3C-SiC Stacking Faults in a 4H-SiC Matrix Camassel, J., Juillaguet, S. Trans Tech Publications
6 Conference Proceedings Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method Chaussende, D., Balloud, C., Auvray, L., Baillet, F., Zielinski, M., Juillaguet, S., Mermoux, M., Pernot, E., Camassel, … Trans Tech Publications	12 Conference Proceedings Trends in Dopant Incorporation for 3C-SiC Films on Silicon M. Zielinski, M. Portail, H. Peyre, T. Chassagne, S. Ndiaye, B. Boyer, A. Leycuras, J. Camassel Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12