Evaluation of On-State Resistance and Boron-Related Levels in n-Type 4H-SiC

Evaluation of On-State Resistance and Boron-Related Levels in n-Type 4H-SiC

Author(s):

Publication title:

Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy

Title of ser.:

Materials science forum

Ser. no.:

483-485

Pub. Year:

2005

Page(from):

425

Page(to):

428

Pages:

4

Pub. info.:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499632 [0878499636]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00014242
Series ID:	PA00000012
Conf. info. (Name):	ECSCRM : European Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2004 : 5th
Conf. info. (Venue):	Bologna, Italy
Conf. info. (Date):	2004.08.31-2004.09.04

Similar Items:

1 Conference Proceedings Origin and Behaviour of Deep Levels in Sublimation Growth of 4H-SiC Layers Syvajarvi, M., Yakimova, R., Ciechonski, R..R., Davydov, D., Lebedev, A.A., Janzen, E. Trans Tech Publications	7 Conference Proceedings EPR, ESE and Pulsed ENDOR Study of Nitrogen Related Centers in 4H-SiC Wafers Grown by Different Technologies E.N. Kalabukhova, S.N. Lukin, D.V. Savchenko, W.C. Mitchel, S. Greulich-Weber, U. Gerstmann, A. Poeppl, J. Hoentsch, E. … Trans Tech Publications
2 Conference Proceedings Characterization of 4H-SiC MOS Structures with Al2O3 as Gate Dielectric Paskaleva, A., Ciechonski, R. R., Syvajarvi, M., Atanassova, E., Yakimova, R. Trans Tech Publications	8 Conference Proceedings Behavior of Micropipes during Growth in 4H-SiC Vouroutzis, N., Yakimova, R., Syvajarvi, M., Jacobson, H., Stoemenos, J., Janzen, E. Trans Tech Publications
3 Conference Proceedings Effect of Ambient on 4H-SiC Bulk Crystals Grown by Sublimation Ciechonski, R.R., Yakimova, R., Syvajarvi, M., Janzen, E. Trans Tech Publications	9 Conference Proceedings Characteristics of Boron in 4H-SiC Layers Produced by High-Temperature Techniques Kakanakova-Georgieva, A., Yakimova, R., Zhang, J., Storasta, L., Syvajarvi, M., Janzen, E. Trans Tech Publications
4 Conference Proceedings Growth of Device Quality 4H-SiC High Velocity Epitaxy Yakimova, R., Syvajarvi, M., Ciechonski, R.R, Wahab, Q. Trans Tech Publications	10 Conference Proceedings X-Ray Diffraction Analysis of Epigrowth on Porous 4H-SiC Substrates Shulpina, I. L., Savkina, N. S., Shuman, V. B., Ratnikov, V. V., Syvajarvi, M., Yakimova, R. Trans Tech Publications
5 Conference Proceedings Process Induced Extended Defects in SiC Grown via Sublimation Yakimova, R., Syvajarvi, M., Jacobson, H., Ciechonski, R.R., Vouroutzis, N., Stoemenos, J. Materials Research Society	11 Conference Proceedings Initial Growth in 3C-SiC Sublimation Epitaxy on 6H-SiC M. Syvajarvi, N. Sritirawisarn, R. Yakimova Trans Tech Publications
6 Conference Proceedings Vacancies in As-Grown and Electron-Irradiated 4H-SiC Epilayers Investigated by Positron Annihilation Dannefaer, S., Avalos, V., Syvajarvi, M., Yakimova, R. Trans Tech Publications	12 Conference Proceedings Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC A. Gallstrorm, B. Magnusson, P. Carlsson, N.T. Son, A. Henry, F. Beyer, M. Syvajarvi, R. Yakimova, E. Janzen Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12