Nonequilibrium Carrier Diffusion and Recombination in Heavily-Doped and Semi-Insulating Bulk HTCVD Grown 4H-SiC Crystals
- Author(s):
Storasta, L. Aleksiejunas, R. Sudzius, M. Kadys, A. Malinauskas, T. Jarasiunas, K. Magnusson, B. Janzen, E. - Publication title:
- Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy
- Title of ser.:
- Materials science forum
- Ser. no.:
- 483-485
- Pub. Year:
- 2005
- Page(from):
- 409
- Page(to):
- 412
- Pages:
- 4
- Pub. info.:
- Uetikon-Zuerich: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878499632 [0878499636]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Non-Equilibrium Carrier Diffusion and Recombination in Semi-Insulating PVT Grown Bulk 6H-SiC Crystals
Trans Tech Publications |
7
Conference Proceedings
Deep Levels Responsible for Semi-Insulating Behavior in Vanadium-Doped 4H-SiC Substrates
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Materials Research Society |
Trans Tech Publications |
4
Conference Proceedings
Nondestructive diagnostics of bulk GaAs and CdZnTe crystals by nanosecond and picosecond wave-mixing techniques
SPIE-The International Society for Optical Engineering |
10
Conference Proceedings
Intrinsic Defects in Semi-Insulating SiC: Deep Levels and their Roles in Carrier Compensation
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
SPIE-The International Society for Optical Engineering |
Trans Tech Publications |