Electronic Levels Induced by Irradiation in 4H-Silicon Carbide
- Author(s):
- Publication title:
- Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy
- Title of ser.:
- Materials science forum
- Ser. no.:
- 483-485
- Pub. Year:
- 2005
- Page(from):
- 359
- Page(to):
- 364
- Pages:
- 6
- Pub. info.:
- Uetikon-Zuerich: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878499632 [0878499636]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Deep Levels in 4H Silicon Carbide Epilayers Induced by Neutron-Irradiation up to 10^16 n/cm2
Materials Research Society |
7
Conference Proceedings
Electrical and Optical Characterization of Electron Irradiated X Rays Detectors Based on 4H-SiC Epitaxial Layers
Trans Tech Publications |
Materials Research Society |
MRS - Materials Research Society |
3
Conference Proceedings
Deep Levels Induced by High Fluence Proton Irradiation in Undoped GaAs Diodes
MRS - Materials Research Society |
Trans Tech Publications |
4
Conference Proceedings
Silicon Carbide for Alpha, Beta, Ion and Soft X-Ray High Performance Detectors
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
11
Conference Proceedings
*Light-excitation-based spectroscopy of electronic defects in novel materials
MRS-Materials Research Society |
Materials Research Society |
Materials Research Society |