Is the Al Solubility Limit in SiC Temperature Dependent or not?

Is the Al Solubility Limit in SiC Temperature Dependent or not?

Author(s):

Jacquier, C.

Ferro, G.

Zielinski, M.

Polychroniadis, E. K.

Publication title:

Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy

Title of ser.:

Materials science forum

Ser. no.:

483-485

Pub. Year:

2005

Page(from):

125

Page(to):

128

Pages:

4

Pub. info.:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499632 [0878499636]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00014242
Series ID:	PA00000012
Conf. info. (Name):	ECSCRM : European Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2004 : 5th
Conf. info. (Venue):	Bologna, Italy
Conf. info. (Date):	2004.08.31-2004.09.04

Similar Items:

1 Conference Proceedings Growth and Characterisation of Heavily Al-Doped 4H-SiC Layers Grown by VLS in an Al-Si Melt Jacquier, C., Ferro, G., Balloud, C., Zielinski, M., Camassel, J., Polychroniadis, E., Stoemenos, J., Cauwet, F., … Trans Tech Publications	7 Conference Proceedings Comparison between Ar and N2 for High-Temperature Treatment of 4H-SiC Substrates Younes, G., Ferro, G., Jacquier, C., Dazord, J., Monteil, Y. Trans Tech Publications
2 Conference Proceedings Comparative Evaluation of Free-Standing 3C-SiC Crystals Polychroniadis, E. K., Balloud, C., Juillaguet, S., Ferro, G., Monteil, Y., Camassel, J., Stoemenos, J. Trans Tech Publications	8 Conference Proceedings Potential of HMDS/C3H8 Precursor System for the Growth of State of the Art Heteroepitaxial 3C-SiC Layers on Si(100) Ferro, G., Camassel, J., Juillaguet, S., Balloud, C., Polychroniadis, E.K., Stoimenos, Y., Seigle-Ferrand, P., Dazord, … Trans Tech Publications
3 Conference Proceedings Is Al-Si a Good Melt for the Low-Temperature LPE of 4H-SiC? Jacquier, C., Ferro, G., Cauwet, F., Viala, J.C., Monteil, Y. Trans Tech Publications	9 Conference Proceedings Using Vapour-Liquid-Solid Mechanism for SiC Homoepitaxiat Growth on on-axis α-SiC (0001) at Low Temperature Soueidan, M., Ferro, G., Cauwet, F., Mollet, L., Jacquier, C., Younes, G., Monteil, Y. Trans Tech Publications
4 Conference Proceedings Electrical Characterization of Heavily Al Doped 4H-SiC Layer Grown by Vapor-Liquid-Solid Epitaxy in Al-Si Melt Godignon, P., Jacquier, C., Blanque, S., Montserrat, J., Ferro, G., Contreras, S., Zielinski, M., Monteil, Y. Trans Tech Publications	10 Conference Proceedings Aluminium-Silicon as a Melt for the Low Temperature Growth of SiC Crystals Chaussende, D., Jacquier, C., Ferro, G., Viala, J.C., Cauwet, F., Monteil, Y. Trans Tech Publications
5 Conference Proceedings Single-Domain 3C-SiC Epitaxially Grown on 6H-SiC by the VLS Mechanism Soueidan, M., Ferro, G., Stoemenos, J., Polychroniadis, E.K., Chaussende, D., Soares, F., Juillaguet, S., Camassel, J., … Trans Tech Publications	11 Conference Proceedings SiO2 as Oxygen Source for the Chemical Vapor Transport of SiC Jacquier, C., Ferro, G., Cauwet, F., Monteil, Y. Trans Tech Publications
6 Conference Proceedings Investigation of Thick 3C-SiC Films Re-Grown on Thin 35 nm "Flash Lamp Annealed" 3C-SiC Layers Ferro, G., Panknin, D., Stoemenos, J., Balloud, C., Camassel, J., Polychroniadis, E., Monteil, Y., Skorupa, W. Trans Tech Publications	12 Conference Proceedings SiO2 as Oxygen Source for the Chemical Vapor Transport of SiC Jacquier, C., Ferro, G., Cauwet, F., Monteil, Y. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12