CVD Growth and Characterization of 4H-SiC Epitaxial Film on (1120) As-Cut Substrates

CVD Growth and Characterization of 4H-SiC Epitaxial Film on (1120) As-Cut Substrates

Author(s):

Zhang, Z.

Publication title:

Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy

Title of ser.:

Materials science forum

Ser. no.:

483-485

Pub. Year:

2005

Page(from):

113

Page(to):

116

Pages:

4

Pub. info.:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499632 [0878499636]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00014242
Series ID:	PA00000012
Conf. info. (Name):	ECSCRM : European Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2004 : 5th
Conf. info. (Venue):	Bologna, Italy
Conf. info. (Date):	2004.08.31-2004.09.04

Similar Items:

1 Conference Proceedings Stability of Thick Layers Grown on (1-100) and (11-20) Orientations of 4H-SiC Syvajarvi, M., Yakimova, R., Yazdi, G.R., Arjunan, A., Toupitsyn, E., Sudarshan, T.S. Trans Tech Publications	7 Conference Proceedings CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates Shishkin, Y., Ke, Y., Yan, F., Devaty, R.P., Choyke, W.J., Saddow, S.E. Trans Tech Publications
2 Conference Proceedings A Study of 6H-Seeded 4H-SiC Bulk Growth by PVT Tupitsyn, E. Y., Arjunan, A., Bondokov, R. T., Kennedy, R. M., Sudarshan, T. S. Trans Tech Publications	8 Conference Proceedings Growth of Low Basal Plane Dislocation Density SiC Epitaxial Layers Zhang, Z.H., Sudarshan, T.S. Trans Tech Publications
3 Conference Proceedings Characterization and Comparison of 4H-SiC(1120) and 4H-SiC(0001)8° Off-Axis Substrates and Homoepitaxial Films Bishop, S.M., Preble, E.A., Hallin, C., Henry, A., Sarney, W., Chang, H.-R., Storasta, L., Jacobson, H., Reitmeier, … Materials Research Society	9 Conference Proceedings Investigation of Triangular Defects in 4H-SiC 4° Off Cut (0001) Si Face Epilayers Grown by CVD A. Shrivastava, P.G. Muzykov, B. Pearman, S.M. Angel, T.S. Sudarshan Trans Tech Publications
4 Conference Proceedings Evaluation of p-Type Doping for (1120) Epitaxial Layers Grown on α-Cut (1120) 4H-SiC Substrates Blanc, C., Zielinski, M., Souliere, V., Sartel, C., Juillaguet, S., Contreras, S., Camassel, J., Monteil, Y. Trans Tech Publications	10 Conference Proceedings A Technique for Rapid Thick Film SiC Epitaxial Growth Khlebnikov, I., Sudarshan, T. S., Madangarli, V., Capano, M. A. MRS - Materials Research Society
5 Conference Proceedings 4H-SiC (1120) Epitaxial Growth Kimoto, T., Yamamoto, T., Chen, Z. Y., Yano, H., Matsunami, H. Trans Tech Publications	11 Conference Proceedings SiC Epitaxial Growth on Carbon Khlebnikov, I., Madangarli, V., Sudarshan, T. S. MRS - Materials Research Society
6 Conference Proceedings Metalorganic Chemical Vapor Deposition of Non-polar III-Nitride Films over a-plane SiC Substrates Li, Jiawei, Gong, Zheng, Chen, Changqing, Adivarahan, Vinod, Gaevski, Mikhail, Kuokstis, Edmundas, Shatalov, Maxim, Gao, … Materials Research Society	12 Conference Proceedings Growth and Characterization of the 4H-SiC Epilayers on Substrates with Different Off-Cut Directions Tsuchida, H., Kamata, I., Izumi, S., Tawara, T., Izumi, K. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12