Growth and Properties of GaN/Si Heterojunction

Growth and Properties of GaN/Si Heterojunction

Author(s):

Hassan, Z.

Publication title:

Cross-disciplinary applied research in materials science and technology : proceedings of the 1st International Meeting on Applied Physics (APHYS-2003), Badajoz, Spain, October 13th-18th 2003

Title of ser.:

Materials science forum

Ser. no.:

480-481

Pub. Year:

2005

Page(from):

531

Page(to):

536

Pages:

6

Pub. info.:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499625 [0878499628]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00014240
Series ID:	PA00000012
Conf. info. (Name):	APHYS : International Meeting on Applied Physics
Conf. info. (Number):	2003 : 1st
Conf. info. (Venue):	Badajoz, Spain,
Conf. info. (Date):	2003.10.13-2003.10.18

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