Studies of Damage Accumulation in 4H Silicon Carbide by Ion-Channeling Techniques

Studies of Damage Accumulation in 4H Silicon Carbide by Ion-Channeling Techniques

Author(s):

Publication title:

PRICM 5 : the Fifth Pacific Rim International Conference on Advanced Materials and Processing, November 2-5, 2004, Beijing, China

Title of ser.:

Materials science forum

Ser. no.:

475-479(2)

Pub. Year:

2005

Page(from):

1341

Page(to):

1344

Pages:

4

Pub. info.:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499601 [0878499601]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00014236
Series ID:	PA00000012
Conf. info. (Name):	PRICM : Pacific Rim International Conference on Advanced Materials and Processing
Conf. info. (Number):	5th
Conf. info. (Venue):	Beijing, China
Conf. info. (Date):	2004.11.02-2004.11.05

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