Observation of Cubic GaN/AIN Heterointerface Formation by RHEED in Plasma-Assisted Molecular Beam Epitaxy

Observation of Cubic GaN/AIN Heterointerface Formation by RHEED in Plasma-Assisted Molecular Beam Epitaxy

Author(s):

Okumura, H.

Publication title:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

Title of ser.:

Materials science forum

Ser. no.:

338-342(2)

Pub. Year:

2000

Page(from):

1545

Page(to):

1548

Pages:

4

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00014227
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials : ICSCRM
Conf. info. (Number):	1999
Conf. info. (Venue):	Research Triangle Park, North Carolina, USA
Conf. info. (Date):	1999.10.10-1999.10.15

Similar Items:

1 Conference Proceedings RHEED Studies of In Effect on the N-Polarity GaN Surface Kinetics Modulation in Plasma-Assisted Molecular-Beam Epitaxy Shen, X.Q., Ide, T., Shimizu, M., Okumura, H. Trans Tech Publications	7 Conference Proceedings Effect of Atomic-Hydrogen Treatment of(001)GaAs Sbustrate at "High Temperatures" on rf Plasma-Assisted Molecular-Beam Epitaxy of Cubic GaN Yokshikawa, A., Nagano, H., Qin, Z. X., Sugure, Y., Jia, A. W., Kobayashi, M., Shimotomai, M., Kato, Y., Takahashi, K. MRS - Materials Research Society
2 Conference Proceedings RHEED Studies of In Effect on the N-Polarity GaN Surface Kinetics Modulation in Plasma-Assisted Molecular-Beam Epitaxy Shen, X.Q., Ide, T., Shimizu, M., Okumura, H. Trans Tech Publications	8 Conference Proceedings A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy Kimura, Ryuhei, Takahashi, Kiyoshi, Grahn, H. T. Materials Research Society
3 Conference Proceedings Achievements And Characterizations Of GaN With Ga-Polarity In Radio Frequency Plasma-Assisted Molecular Beam Epitaxy Shen, Xu-Qiang, Ide, T., Cho, S.H., Shimizu, M., Hara, S., Okumura, H. Materials Research Society	9 Conference Proceedings Growth of GaN on Porous SiC Substrates by Plasma-Assisted Molecular Beam Epitaxy Inoki, C.K., Kuan, T.S., Lee, C.D., Sagar, Ashutosh, Feenstra, R.M. Materials Research Society
4 Conference Proceedings Plasma-Assisted Molecular Beam Epitaxial Growth of AlN Films on Vicinal Sapphire (0001) Substrates Shen, X.Q., Okumura, H. Trans Tech Publications	10 Conference Proceedings A Comparison of Magnesium and Beryllium Acceptors in GaN Grown by rf-Plasma Assisted Molecular Beam Epitaxy Ptak, A. J., Myers, T. H., Wang, Lijun, Giles, N. C., Moldovan, M., Cunha, C.R. Da, Hornak, L. A., Tian, C., Hockett, R. … Materials Research Society
5 Conference Proceedings Silicon Molecular Beam Epitaxy Sakamoto T., Sakamoto K., Miki K., Okumura H., Yoshida S., Tokumoto H. Plenum Press	11 Conference Proceedings GaN Layers Re-Grown on Etched GaN Templates by Plasma Assisted Molecular Beam Epitaxy He, L., Gu, X., Xie, J, Yun, F., Baski, A.A., Morkoc, H. Materials Research Society
6 Conference Proceedings Growth and characterization of InGaN/GaN heterostructures using plasma-assisted molecular beam epitaxy Shim, K. H., Hong, S. E., Kim, K. H., Paek, M. C., Cho, K. I. MRS-Materials Research Society	12 Conference Proceedings Structural and Optical Characterization of High-Quality Cubic GaN Epilayers Grown on GaAs and 3C-SiC Substrates by Gas-Source MBE Using RHEED In Situ Monitoring Okumura, H., Balakrishnan, K., Feuillet, G., Ohta, K., Hamaguchi, H., Chichibu, S., Ishida, Y., Yoshida, S. MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12