Dynamic and Steady-State Description of Incomplete Ionization in 4H-SiC Power Diodes under Turn-Off

Dynamic and Steady-State Description of Incomplete Ionization in 4H-SiC Power Diodes under Turn-Off

Author(s):

Publication title:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

Title of ser.:

Materials science forum

Ser. no.:

338-342(2)

Pub. Year:

2000

Page(from):

1335

Page(to):

1338

Pages:

4

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00014227
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials : ICSCRM
Conf. info. (Number):	1999
Conf. info. (Venue):	Research Triangle Park, North Carolina, USA
Conf. info. (Date):	1999.10.10-1999.10.15

Similar Items:

1 Conference Proceedings Investigation of Excess Carrier Distributions in 4H-SiC Power Diodes under Static Conditions and Turn-On Tomblad,O., Galeckas,A., Linnros,J., Breitholtz,B., Lindefelt,U. Trans Tech Publications	7 Conference Proceedings Dynamic Avalanche and Trapped Charge in 4H-SiC Diodes Domeij, M., Breitholtz, B., Aberg, D., Martinez, A., Bergman, P. Trans Tech Publications
2 Conference Proceedings Scattering Probabilities for Multiband Hole States at High Electric Fields and High Collision Rates in 4H-SiC Martinez, A., Hjelm, M., Nilsson, H.E., Lindefelt, U. Trans Tech Publications	8 Conference Proceedings 4H-SiC Gate Turn-Off Thyristor Designs for Very High Power Control Shah, P. B., Geil, B. R., Jones, K. A., Griffin, T. E., Derenge, M. A. Trans Tech Publications
3 Conference Proceedings A Study of Band to Band Tunneling with Application to High-Field Transport in Hexagonal SiC Polytypes Martinez, A., Nilsson, H.-E., Lindefelt, U. Trans Tech Publications	9 Conference Proceedings Fabrication and Characterization of 4H-SiC 6kV Gate Turn-Off Thyristor L. Lin, J.H. Zhao Trans Tech Publications
4 Conference Proceedings Ionization Rates and Critical Fields in 4H SiC Junction Devices Konstantinov,A.O., Wahab,Q., Nordell,N., Lindefelt,U. Trans Tech Publications	10 Conference Proceedings 2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development Agarwal, A., Ryu, S. -H., Singh, R., Kordina, O., Palmour, J. W. Trans Tech Publications
5 Conference Proceedings Free Carrier Diffusion in 4H-SiC Grivickas, P., Martinez, A., Mikulskas, I., Grivickas, V., Tomasiunas, R., Linnros, J., Lindefelt, U. Trans Tech Publications	11 Conference Proceedings Calculated Density of States and Carrier Concentration in 4H- and 6H-SiC Persson,C., Lindefelt,U. Trans Tech Publications
6 Conference Proceedings Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes Bergman, J.P., Lendenmann, H., Nilsson, P.A., Lindefelt, U., Skytt, P. Trans Tech Publications	12 Conference Proceedings Turn-off Performance of a 2.6 kV 4H-SiC Asymmetrical GTO Thyristor Agarwal, A.K., Ivanov, P.A., Levinshtein, M.E., Palmour, J.W., Rumyantsev, S.L., Ryu, S.H., Shur, M.S. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12