Effect of Boron Implantation on 6H-SiC N-MOSFET Interface Properties
- Author(s):
Godignon, P. Jorda, X. Vellvehi, M. Berberich, S. Montserrat, J. Ottaviani, L. - Publication title:
- Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999
- Title of ser.:
- Materials science forum
- Ser. no.:
- 338-342(2)
- Pub. Year:
- 2000
- Page(from):
- 1303
- Page(to):
- 1306
- Pages:
- 4
- Pub. info.:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878498543 [0878498540]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
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