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Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-Voltage 4H-SiC Schottky Diodes

Author(s):
Wahab, Q.
Ellison, A.
Hallin, C.
Henry, A.
Persio, J. Di
Martinez, R.
Janzen, E.
2 more
Publication title:
Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999
Title of ser.:
Materials science forum
Ser. no.:
338-342(2)
Pub. date:
2000
Page(from):
1175
Page(to):
1178
Pages:
4
Pub. info.:
Zuerich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878498543 [0878498540]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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