Comparison of High-Temperature Electrical Characterizations of Pulsed-Laser Deposited AIN on 6H- and 4H-SiC from 25 to 450℃
- Author(s):
Lelis, A. J. Scozzie, C. J. McLean, F. B. Geil, B. R. Vispute, R. D. Venkatesan, T. - Publication title:
- Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999
- Title of ser.:
- Materials science forum
- Ser. no.:
- 338-342(2)
- Pub. Year:
- 2000
- Page(from):
- 1137
- Page(to):
- 1140
- Pages:
- 4
- Pub. info.:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878498543 [0878498540]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
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