Mobility in 6H-SiC n-Channel MOSFETs

Mobility in 6H-SiC n-Channel MOSFETs

Author(s):

Publication title:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

Title of ser.:

Materials science forum

Ser. no.:

338-342(2)

Pub. Year:

2000

Page(from):

1121

Page(to):

1124

Pages:

4

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00014227
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials : ICSCRM
Conf. info. (Number):	1999
Conf. info. (Venue):	Research Triangle Park, North Carolina, USA
Conf. info. (Date):	1999.10.10-1999.10.15

Similar Items:

1 Conference Proceedings Comparison of High-Temperature Electrical Characterizations of Pulsed-Laser Deposited AIN on 6H- and 4H-SiC from 25 to 450℃ Lelis, A. J., Scozzie, C. J., McLean, F. B., Geil, B. R., Vispute, R. D., Venkatesan, T. Trans Tech Publications	7 Conference Proceedings High Channel Mobility 4H-SiC MOSFETs Sveinbjornsson, E.O., Gudjonsson, G., Allerstam, F., Olafsson, H.O., Nilsson, P.A., Zirath, H., Rodle, T., Jos, R. Trans Tech Publications
2 Conference Proceedings Using a First Principles Coulomb Scattering Mobility Model for 4H-SiC MOSFET Device Simulation Potbhare, S., Pennington, G., Goldsman, N., Lelis, A.J., Habersat, D.B., McLean, F.B., McGarrity, J.M. Trans Tech Publications	8 Conference Proceedings Dependence of Channel Mobility on the Surface Step Orientation in Planar 6H-SiC MOSFETs Scharnholz,S., Karnienski,E.Stein von, Golz,A., Leonhard,C., Kurz,H. Trans Tech Publications
3 Conference Proceedings Bias Stress-Induced Threshold-Voltage Instability of SiC MOSFETs Lelis, A.J., Habersat, D.B., Lopez, G., McGarrity, J.M., McLean, F.B., Goldsman, N. Trans Tech Publications	9 Conference Proceedings Charge Pumping Measurements on SiC MOSFETs Scozzie,C.J., McGarrity,J.M. Trans Tech Publications
4 Conference Proceedings A Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET Devices Krishnaswami, S., Ryu, S.H., Heath, B., Agarwal, A.K., Palmour, J.W., Geil, B.R., Lelis, A.J., Scozzie, C.J. Trans Tech Publications	10 Conference Proceedings Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300oC NO Anneal Das, M.K., Hull, B.A., Krishnaswami, S., Husna, F., Haney, S., Lelis, A.J., Scozzie, C.J., Scofield, J.D. Trans Tech Publications
5 Conference Proceedings Pulsed Laser Deposition: A Novel Growth Technique for Wide-Bandgap Semiconductor Research Vispute, R. D., Enck, R., Patel, A., Ming, B., Sharma, R. P., Venkatesan, T., Scozzie, C. J., Lelis, A., McLean, F. B., … Trans Tech Publications	11 Conference Proceedings Temperature-Dependence of SiC MOSFET Threshold-Voltage Instability A.J. Lelis, D.B. Habersat, R. Green, N. Goldsman Trans Tech Publications
6 Conference Proceedings Effect of Band-Edge Interface Traps and Transition Region Mobility on Transport in 4H-SiC MOSFETs S. Potbhare, A. Akturk, N. Goldsman, A.J. Lelis, S. Dhar Trans Tech Publications	12 Conference Proceedings Two-Way Tunneling Model of Oxide Trap Charging and Discharging in SiC MOSFETs A.J. Lelis, D.B. Habersat, R. Green, N. Goldsman Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12