MOSFET Performance of 4H-, 6H-, and 15R-SiC Processed by Dry and Wet Oxidation

MOSFET Performance of 4H-, 6H-, and 15R-SiC Processed by Dry and Wet Oxidation

Author(s):

Publication title:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

Title of ser.:

Materials science forum

Ser. no.:

338-342(2)

Pub. Year:

2000

Page(from):

1109

Page(to):

1112

Pages:

4

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00014227
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials : ICSCRM
Conf. info. (Number):	1999
Conf. info. (Venue):	Research Triangle Park, North Carolina, USA
Conf. info. (Date):	1999.10.10-1999.10.15

Similar Items:

1 Conference Proceedings MOS Interface Properties and MOSFET Performance on 4H-SiC{0001} and Non-Basal Faces Processed by N2O Oxidation Kimoto, T., Kanzaki, Y., Noborio, M., Kawano, H., Matsunami, H. Materials Research Society	7 Conference Proceedings 4H- and 6H-SiC MOSFETs Fabricated on Sloped Sidewalls Formed by Molten KOH Etching Wahab, Q., Kosugi, H., Yano, H., Hallin, C., Kimoto, T., Matsunami, H. Trans Tech Publications
2 Conference Proceedings Oxygen-Related Defect Centers Observed in 4H/6H-SiC Epitaxial Layers Grown under CO2 Ambient Klettke, O., Pensl, G., Kimoto, T., Matsunami, H. Trans Tech Publications	8 Conference Proceedings 4H- and 6H-SiC MOSFETs Fabricated on Sloped Sidewalls Formed by Molten KOH Etching Wahab, Q., Kosugi, H., Yano, H., Hallin, C., Kimoto, T., Matsunami, H. Trans Tech Publications
3 Conference Proceedings Kick-Out Phenomena in Epitaxially Boron- and Aluminum-Doped 4H-SiC during Implantation and Annealing Processes Negoro, Y., Kimoto, T., Matsunami, H., Pensl, G. Trans Tech Publications	9 Conference Proceedings Short-Channel Effects in 4H-SiC MOSFETs Noborio, M., Kanzaki, Y., Suda, J., Kimoto, T., Matsunami, H. Trans Tech Publications
4 Conference Proceedings 4H-SiC MOSFETs on (03-38) Face Hirao, T., Yano, H., Kimoto, T., Matsunami, H., Shiomi, H. Trans Tech Publications	10 Conference Proceedings Comparison of the Electrical Channel Properties between Dry- and Wet- Oxidized 6H-SiC MOSFETs Investigated by Hall Effect Laube, M., Pensl, G., Lee, K.K., Ohshima, T. Trans Tech Publications
5 Conference Proceedings 4H-SiC MOSFETs on (03-38) Face Hirao, T., Yano, H., Kimoto, T., Matsunami, H., Shiomi, H. Trans Tech Publications	11 Conference Proceedings Improved Dielectric ind Interface Properties of 4H-SiC MOS Structures Processed by Oxide Deposition and N2O Annealing Kimoto, T., Kawano, H., Noborio, M., Suda, J., Matsunami, H. Trans Tech Publications
6 Conference Proceedings Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETS on (1120) Face Yano, H., Hirao, T., Kimoto, T., Matsunami, H., Asano, K., Sugawara, Y. Trans Tech Publications	12 Conference Proceedings Traps at the SiC/SiO2-Interface Pensl, Gerhard, Bassler, Michael, Ciobanu, Florin, Afanas'ev, Valeri, Yano, Hiroshi, Kimoto, Tsunenobu, Matsunami, … Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12