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Vacancy-Type Defects in Proton-Irradiated 6H- and 4H-SiC: A Systematic Study with Positron Annihilation Techniques

Author(s):
Publication title:
Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999
Title of ser.:
Materials science forum
Ser. no.:
338-342(2)
Pub. Year:
2000
Page(from):
969
Page(to):
972
Pages:
4
Pub. info.:
Zuerich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878498543 [0878498540]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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