Formation of Precipitates in 6H-SiC after Oxygen Implantation and Subsequent Annealing

Formation of Precipitates in 6H-SiC after Oxygen Implantation and Subsequent Annealing

Author(s):

Publication title:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

Title of ser.:

Materials science forum

Ser. no.:

338-342(2)

Pub. Year:

2000

Page(from):

961

Page(to):

964

Pages:

4

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00014227
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials : ICSCRM
Conf. info. (Number):	1999
Conf. info. (Venue):	Research Triangle Park, North Carolina, USA
Conf. info. (Date):	1999.10.10-1999.10.15

Similar Items:

1 Conference Proceedings Consequences of High-Dose, High Temperature Al+ Implantation in 6H-SiC Stoemenos, J., Pecz, B., Heera, V. Trans Tech Publications	7 Conference Proceedings RAPID ISOTHERMAL ANNEALING OF N-IMPLANTED 6H-SiC LAYERS USED FOR FABRICATION OF p-n PHOTODIODES Pensl, G., Helbig, R., Zhang, H., Ziegler, G., Lanig, P. Materials Research Society
2 Conference Proceedings High Dose Implantation in 6H-SiC Heera, V., Skorupa, W., Stoemenos, J., Pecz, B. Trans Tech Publications	8 Conference Proceedings Electrical and Structural Properties of Al-Implanted and Annealed 4H-SiC M. Obernhofer, M. Krieger, F. Schmid, H.B. Weber, G. Pensl, A. Schoerner Trans Tech Publications
3 Conference Proceedings Oxygen-Related Defect Centers Observed in 4H/6H-SiC Epitaxial Layers Grown under CO2 Ambient Klettke, O., Pensl, G., Kimoto, T., Matsunami, H. Trans Tech Publications	9 Conference Proceedings Evolution of Defect and Hydrogen-Related Low Temperature Photoluminescence Spectra with Annealing for Hydrogen or Helium Implanted 6H SiC Yan, F., Devaty, R. P., Choyke, W. J., Gali, A., Schmid, F., Pensl, G., Wagner, G. Trans Tech Publications
4 Conference Proceedings Majority Traps Observed in H+- or He+-Implanted Al-Doped 6H-SiC by Admittance and Deep Level Transient Spectroscopy Reshanov, S.A., Klettke, O., Pensl, G. Trans Tech Publications	10 Conference Proceedings Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions Ohshima, T., Uedono, A., Itoh, H., Yoshikawa, M., Kojima, K., Okada, S., Nashiyama, I., Abe, K., Tanigawa, S., Frank, … Trans Tech Publications
5 Conference Proceedings Epitaxial SiC Formation at the SiO2/Si Interface by C+ Implantation into SiO2 and Subsequent Annealing Voelskow, M., Panknin, D., Polychroniadis, E. K., Ferro, G., Godignion, P., Mestres, N., Skorupa, W., Monteil, Y., … Trans Tech Publications	11 Conference Proceedings Kick-Out Phenomena in Epitaxially Boron- and Aluminum-Doped 4H-SiC during Implantation and Annealing Processes Negoro, Y., Kimoto, T., Matsunami, H., Pensl, G. Trans Tech Publications
6 Conference Proceedings Electrical Characterization of Erbium-Implanted 4H-SiC Epilayers Reshanov, S.A., Klettke, O., Pensl, G., Choyke, W.J. Trans Tech Publications	12 Conference Proceedings ALD Deposited Al2O3 Films on 6H-SiC(0001) after Annealing in Hydrogen Atmosphere Gao, K. Y., Seyller, T., Emtsev, K., Ley, L., Ciobanu, F., Pensl, G. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12