Ab Initio Study of Intrinsic Point Defects and Dopant-Defect Complexes in SiC: Application to Boron Diffusion

Author(s):

• Bockstedte, M.
• Pankratov, O.

Publication title:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

Title of ser.:

Materials science forum

Ser. no.:

338-342(2)

Pub. Year:

2000

Page(from):

949

Page(to):

952

Pages:

4

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings