High Temperature Implant Activation in 4H and 6H-SiC in a Silane Ambient to Reduce Step Bunching
- Author(s):
Saddow, S. E. Williams, J. Isaacs-Smith, T. Capano, M. Cooper, J. A. Mazzola, M. S. Hsieh, A. J. Casady, J. B. - Publication title:
- Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999
- Title of ser.:
- Materials science forum
- Ser. no.:
- 338-342(2)
- Pub. Year:
- 2000
- Page(from):
- 901
- Page(to):
- 904
- Pages:
- 4
- Pub. info.:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878498543 [0878498540]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
Trans Tech Publications |
2
Conference Proceedings
Investigation of Two-Stage Activation Annealing of Al-Implanted 4H-SiC Layers
Trans Tech Publications |
MRS - Materials Research Society |
Trans Tech Publications |
9
Conference Proceedings
Fast Switching (41 MHz), 2.5 mΩ・cm2, High Current 4H-SiC VJFETs for High Power and High Temperature Applications
Trans Tech Publications |
Trans Tech Publications |
10
Conference Proceedings
High Uniformity with Reduced Surface Roughness of Chloride Based CVD Process on 100mm 4° Off-Axis 4H-SiC
Trans Tech Publications |
Trans Tech Publications |
11
Conference Proceedings
A Robust Process for Ion Implant Annealing of SiC in a Low-Pressure Silane Ambient
Materials Research Society |
6
Conference Proceedings
J-V Characteristics of Al+ Ion Implanted p+/n 4H-SiC Diodes Annealed in Silane Ambient at 1600℃
Trans Tech Publications |
Trans Tech Publications |