The Spatial Distribution of the Electronic Wave Function of the Shallow Boron Acceptor in 4H- and 6H-SiC

The Spatial Distribution of the Electronic Wave Function of the Shallow Boron Acceptor in 4H- and 6H-SiC

Author(s):

Duijn-Arnold, A. v.

Publication title:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

Title of ser.:

Materials science forum

Ser. no.:

338-342(1)

Pub. Year:

2000

Page(from):

799

Page(to):

804

Pages:

6

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00014226
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials : ICSCRM
Conf. info. (Number):	1999
Conf. info. (Venue):	Research Triangle Park, North Carolina, USA
Conf. info. (Date):	1999.10.10-1999.10.15

Similar Items:

1 Conference Proceedings High-Frequency EPR Studies of Shallow and Deep Boron Acceptors in 6H-SiC Schmidt,J., Matsumoto,T.M., Poiuektov,O.G., Duijn-Arnold,A.van, Ikoma,T., Baranov,P.G., Mokhov,E.N. Trans Tech Publications	7 Conference Proceedings Evidence of the Ground Triplet State of Silicon-Carbon Divacancies (P6, P7 Centers) in 6H SiC: An EPR Study Ilyin, I.V., Muzafarova, M.V., Mokhov, E.N., Sankin, V.I., Baranov, P.G., Orlinskii, S.B., Schmidt, J. Trans Tech Publications
2 Conference Proceedings The Electronic Structure of the Be Acceptor Centers in 6H-SiC Duijn-Arnold, A. v., Schmidt, J., Poluektov, O. G., Baranov, P. G., Mokhov, E. N. Trans Tech Publications	8 Conference Proceedings Intrinsic Defects in 6H-SiC Generated by Electron Irradiation at the Silicon Displacement Threshold von Bardeleben, H.J., Cantin, J.L., Baranov, P.G., Mokhov, E.N. Trans Tech Publications
3 Conference Proceedings The Electronic Structure of the N Donor Center in 4H-SiC and 6H-SiC van Duijn-Arnold, A., Zondervan, R., Baranov, P.G., Mokhov, E.N., Schmidt, J. Trans Tech Publications	9 Conference Proceedings X-Band ENDOR of Boron and Beryllium Acceptors in Silicon Carbide Hofstaetter,A., Meyer,B.K., Scharmann,A., Baranov,P.G., Ilyin,I.V., Mokhov,E.N. Trans Tech Publications
4 Conference Proceedings High-frequency EPR studies of shallow and deep boron acceptors in 6H-SiC.(Invited) Schmidt,J., Matsumoto,T., Poluektov,O.G., Arnold,A., Ikoma,T., Baranov,P.G., Mokhov,E.N. Trans Tech Publications	10 Conference Proceedings Identification of Iron and Nickel in 6H-SiC by Electron Paramagnetic Resonance Baranov, P.G., Ilyin, I.V., Mokhov, E.N., Khramtsov, V.A. Trans Tech Publications
5 Conference Proceedings Probing of the Wave Function of Shallow Donors and Acceptors by EPR in SiC Crystals with Changed Isotopic Composition Muzafarova, M. V., Ilyin, I. V., Mokhov, E. N., Baranov, P. G., Ber, B. Ya., Ionov, A. N., Kop'ev, P. S., Kaliteevskii, … Trans Tech Publications	11 Conference Proceedings EPR of Deep Al and Deep B in Heavily Al-doped as Grown 4H-SiC Ilyin, I.V., Mokhov, E.N., Baranov, P.G. Trans Tech Publications
6 Conference Proceedings Phosphorus-Related Shallow and Deep Defects in 6H-SiC Baranov, P.G., Ilyin, I.V., Mokhov, E.N., von Bardeleben, H.J., Cantin, J.L. Trans Tech Publications	12 Conference Proceedings Boron Four Particle Acceptor Bound Exciton Complex in 4H SiC Sridhara,S.G., Nizhner,D.G., Devaty,R.P., Choyke,W.J., Troffer,T., Pensl,G., Larkin,D.J., Kong,H.S. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12