Photon Emission Mechanisms in 6H and 4H-SiC MOSFETs

Photon Emission Mechanisms in 6H and 4H-SiC MOSFETs

Author(s):

Banc, C.

Publication title:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

Title of ser.:

Materials science forum

Ser. no.:

338-342(1)

Pub. Year:

2000

Page(from):

695

Page(to):

698

Pages:

4

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00014226
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials : ICSCRM
Conf. info. (Number):	1999
Conf. info. (Venue):	Research Triangle Park, North Carolina, USA
Conf. info. (Date):	1999.10.10-1999.10.15

Similar Items:

1 Conference Proceedings Photon Emission Analysis of Defect-Free 4H-SiC pn Diodes in Avalanche Regime Banc, C., Bano, E., Ouisse, T., Vassilevski, K., Zekentes, K. Trans Tech Publications	7 Conference Proceedings High Temperature Performance of Implanted-Gate n-Channel JFETs in 6H-SiC Sheppard,S.T., Lauer,V., Wondrak,W., Niemann,E. Trans Tech Publications
2 Conference Proceedings Photon Emission Analysis of Defect-Free 4H-SiC pn Diodes in Avalanche Regime Banc, C., Bano, E., Ouisse, T., Vassilevski, K., Zekentes, K. Trans Tech Publications	8 Conference Proceedings Dependence of Channel Mobility on the Surface Step Orientation in Planar 6H-SiC MOSFETs Scharnholz,S., Karnienski,E.Stein von, Golz,A., Leonhard,C., Kurz,H. Trans Tech Publications
3 Conference Proceedings Impact Ionization in 6H-SiC MOSFET's Bano,E., Ouisse,T., Scharnholz,S.P., Golz,A. Trans Tech Publications	9 Conference Proceedings Determination of 4H-SiC Ionization Rates Using OBIC Based on Two-Photon Absorption H. Hamad, C. Raynaud, P. Bevilacqua, S. Scharnholz, B. Vergne Trans Tech Publications
4 Conference Proceedings Noise Behavior of 4H-SiC MESFETs at Low Drain Voltage Banc, C., Royet, A.S., Ouisse, T., Bano, E., Noblanc, O., Brylinski, C. Trans Tech Publications	10 Conference Proceedings 4H-SiC IMPATT Diode Fabrication and Testing Vassilevski, K.V., Zorenko, A.V., Zekentes, K., Tsagaraki, K., Bano, E., Banc, C., Lebedev, A.A. Trans Tech Publications
5 Conference Proceedings Hot-Carrier Luminescence in 4H-SiC MESFETs Banc, C., Bano, E., Ouisse, T., Noblanc, O., Brylinski, C. Trans Tech Publications	11 Conference Proceedings 4H-SiC IMPATT Diode Fabrication and Testing Vassilevski, K.V., Zorenko, A.V., Zekentes, K., Tsagaraki, K., Bano, E., Banc, C., Lebedev, A.A. Trans Tech Publications
6 Conference Proceedings Hot-Carrier Luminescence in 4H-SiC MESFETs Banc, C., Bano, E., Ouisse, T., Noblanc, O., Brylinski, C. Trans Tech Publications	12 Conference Proceedings Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diodes H. Vang, S. Scharnholz, C. Raynaud, M. Lazar, G. Pâques Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12