X-Ray Topographic Study of SiC Crystal at High Temperature
- Author(s):
Yamaguchi, H. Oyanagi, Na. Kato, T. Takano, Y. Nishizawa, S. Bahng, W. Yoshida, S. Arai, K. - Publication title:
- Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999
- Title of ser.:
- Materials science forum
- Ser. no.:
- 338-342(1)
- Pub. Year:
- 2000
- Page(from):
- 461
- Page(to):
- 464
- Pages:
- 4
- Pub. info.:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878498543 [0878498540]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment
Trans Tech Publications |
7
Conference Proceedings
Enlargement of SiC Single Crystal: Enhancement of Lateral Growth using Tapered Graphite Lid
Trans Tech Publications |
Trans Tech Publications |
8
Conference Proceedings
Dislocation Constraint by Etch-Back Process of Seed Crystal in SiC Bulk Crystal Growth
Trans Tech Publications |
Trans Tech Publications |
9
Conference Proceedings
Dislocation Constraint by Etch-Back Process of Seed Crystal in SiC Bulk Crystal Growth
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
5
Conference Proceedings
SiC Single Crystal Growth Rate Measurement by in-Situ Observation using the Transmission X-Ray Technique
Trans Tech Publications |
Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |