In-Situ RHEED Analysis During (1-SiC Homoepitaxy on (0001)Si- and (0001)C-Faces by Gas Source Molecular Beam Epitaxy

In-Situ RHEED Analysis During (1-SiC Homoepitaxy on (0001)Si- and (0001)C-Faces by Gas Source Molecular Beam Epitaxy

Author(s):

Hatayama, T.

Publication title:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

Title of ser.:

Materials science forum

Ser. no.:

338-342(1)

Pub. Year:

2000

Page(from):

361

Page(to):

364

Pages:

4

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00014226
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials : ICSCRM
Conf. info. (Number):	1999
Conf. info. (Venue):	Research Triangle Park, North Carolina, USA
Conf. info. (Date):	1999.10.10-1999.10.15

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