The Influence of Foreign Atoms on the early Stages of SiC Growth on (111)Si

The Influence of Foreign Atoms on the early Stages of SiC Growth on (111)Si

Author(s):

Pezoldt, J.

Masri, P.

Rouhani Laridjani, M.

Publication title:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

Title of ser.:

Materials science forum

Ser. no.:

338-342(1)

Pub. Year:

2000

Page(from):

289

Page(to):

292

Pages:

4

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00014226
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials : ICSCRM
Conf. info. (Number):	1999
Conf. info. (Venue):	Research Triangle Park, North Carolina, USA
Conf. info. (Date):	1999.10.10-1999.10.15

Similar Items:

1 Conference Proceedings On the role of foreign atoms in the optimization of 3C-SiC/Si heterointerfaces Masri, P., Moreaud, N., Averous, M., Stauden, Th., Wohner, T., Pezoldt, J. MRS-Materials Research Society	7 Conference Proceedings State of Art of c-BN Growth Physics: Substrate Effect Masri, P., Guiot, E., Mortet, V., Rouhani Laridjani, M., Averous, M. Trans Tech Publications
2 Conference Proceedings Structural and Elasticity-Based Properties of SiC-based Interfaces: Their Relevance to the Heteroepitaxy of III-V Nitrides Masri, P., Laridjani, M. Rouhani, Stauden, Th., Pezoldt, J., Averous, M. Materials Research Society	8 Conference Proceedings In Situ Spectroscopic Ellipsometry Studies of the Interaction Process of Ethene With Si Surfaces During SiC Formation Wohner, T., Stauden, Th., Cimalla, V., Eichhorn, G., Schaefer, J. A., Pezoldt, J. MRS - Materials Research Society
3 Conference Proceedings In Situ Monitoring of the Effect of Ge on the SiC Growth on (111)Si Surfaces Wohner, T., Stauden, Th., Schaefer, J. A., Pezoldt, J. Trans Tech Publications	9 Conference Proceedings High-Resolution XRD Investigations of the Strain Reduction in 3C-SiC Thin Films Grown on Si (111) Substrates Weih, P., Cimalla, V., Forster, C., Pezoldt, J., Stauden, Th., Spiess, L., Romanus, H., Hermann, M., Eickhoff, M., … Trans Tech Publications
4 Conference Proceedings The Influence of Ge on the SiC Nucleation on (111)Si Surfaces Pezoldt, J., Woehner, T., Stauden, T., Schaefer, J.A., Masri, P. Trans Tech Publications	10 Conference Proceedings Growth of SiC Layers on(111)Si by Solid Source Molecular Beam Epitaxy Pezoldt,J., Stauden,T., Cimalla,V., Ecke,G., Romanus,H., Eichhorn,G. Trans Tech Publications
5 Conference Proceedings Silicon Carbide Buffer Layers for Nitride Growth on Si Masri, P., Herro, Z., Stauden, Th., Pezoldt, J., Sumiya, M., Averous, M. Trans Tech Publications	11 Conference Proceedings Influence of the Ge Coverage Prior to Carbonization on the Structure of SiC Grown on Si(111) Morales, F.M., Zgheib, Ch., Molina, S.I., Araujo, D., Garcia, R., Fernandez, C., Sanz-Hervas, A., Masri, P., Weih, P., … Trans Tech Publications
6 Conference Proceedings Silicon Carbide Buffer Layers for Nitride Growth on Si Masri, P., Herro, Z., Stauden, Th., Pezoldt, J., Sumiya, M., Averous, M. Trans Tech Publications	12 Conference Proceedings In Situ RHEED Studies on the Influence of Ge on the Early Stages of SiC on Si(111) and (100) Surfaces Cimalla, V., Zekentes, K., Tsagaraki, K., Stauden, T., Scharmann, F., Pezoldt, J. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12