Structural Investigations of the Nucleation and Growth of SiC during Rapid Thermal Conversion of (111)Si
- Author(s):
- Publication title:
- Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999
- Title of ser.:
- Materials science forum
- Ser. no.:
- 338-342(1)
- Pub. Year:
- 2000
- Page(from):
- 285
- Page(to):
- 288
- Pages:
- 4
- Pub. info.:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878498543 [0878498540]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
SiC Precipitate Formation During High-Dose Carbon Implantation Into Silicon
MRS - Materials Research Society |
Trans Tech Publications |
2
Conference Proceedings
SiC Precipitate Formation During High-Dose Carbon Implantation into Silicon
MRS - Materials Research Society |
Trans Tech Publications |
MRS - Materials Research Society |
MRS - Materials Research Society |
4
Conference Proceedings
Mechanisms of SiC Formation in the Ion Beam Synthesis of 3C-SiC Layers in Silicon
Trans Tech Publications |
10
Conference Proceedings
Phase formation studies and structural properties of laser ablated (Pb,La)(Zr,Ti)O3-thin films on stainless steel
MRS-Materials Research Society |
5
Conference Proceedings
Influence of the growth temperature on SiC nanocluster nucleation on Si(111) surface during MBE process
SPIE-The International Society for Optical Engineering |
Trans Tech Publications |
MRS - Materials Research Society |
Trans Tech Publications |