Temperature Gradient Effect on SiC Epitaxy in Liquid Phase

Temperature Gradient Effect on SiC Epitaxy in Liquid Phase

Author(s):

Publication title:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

Title of ser.:

Materials science forum

Ser. no.:

338-342(1)

Pub. Year:

2000

Page(from):

233

Page(to):

236

Pages:

4

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00014226
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials : ICSCRM
Conf. info. (Number):	1999
Conf. info. (Venue):	Research Triangle Park, North Carolina, USA
Conf. info. (Date):	1999.10.10-1999.10.15

Similar Items:

1 Conference Proceedings Shape of SiC Bulk Single Crystal Grown by Sublimation Nishizawa, S., Kitou, Y., Bahng, W., Oyanagi, N., Khan, M. N., Arai, K. Trans Tech Publications	7 Conference Proceedings Flux-Controlled Sublimation Growth by an Inner Guide-Tube Kitou, Y., Bahng, W., Kato, T., Nishizawa, S., Arai, K. Trans Tech Publications
2 Conference Proceedings Enlargement of SiC Single Crystal: Enhancement of Lateral Growth using Tapered Graphite Lid Bahng, W., Kitou, Y., Nishizawa, S., Yamaguchi, H., Khan, M. N., Oyanagi, N., Arai, K., Nishino, S. Trans Tech Publications	8 Conference Proceedings New Crecible Design for SiC Single Crystal Growth by Sublimation Nishizawa, Shin-ichi, Yamaguchi, Hirotaka, Kato, Tomohisa, Khan, M. Nasir, Arai, Kazuo, Oyanagi, Naoki, Kitou, Yasuo, … Materials Research Society
3 Conference Proceedings Pressure Effect in Sublimation Growth of Bulk SiC Kitou, Y., Bahng, W., Nishizawa, S., Nishino, S., Arai, K. Trans Tech Publications	9 Conference Proceedings Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical MOSFETs Kiritani, N., Hoshi, M., Tanimoto, S., Adachi, K., Nishizawa, S.-i., Yatsuo, T., Okushi, H., Arai, K. Trans Tech Publications
4 Conference Proceedings X-Ray Topographic Study of SiC Crystal at High Temperature Yamaguchi, H., Oyanagi, Na., Kato, T., Takano, Y., Nishizawa, S., Bahng, W., Yoshida, S., Arai, K. Trans Tech Publications	10 Conference Proceedings Numerical Simulation of Heat and Mass Transfer in SiC Sublimation Growth Nishizawa, S., Kato, T., Kitou, Y., Oyanagi, N., Arai, K. Trans Tech Publications
5 Conference Proceedings High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment Nishizawa, S.I., Kato, T., Kitou, Y., Oyanagi, N., Hirose, F., Yamaguchi, H., Bahng, W., Arai, K. Trans Tech Publications	11 Conference Proceedings Growth and Evaluation of High Quality SiC Crystal by Sublimation Method Oyanagi, N., Yamaguchi, H., Kato, T., Nishizawa, S., Arai, K. Trans Tech Publications
6 Conference Proceedings Flux-Controlled Sublimation Growth by an Inner Guide-Tube Kitou, Y., Bahng, W., Kato, T., Nishizawa, S., Arai, K. Trans Tech Publications	12 Conference Proceedings Defect Analysis of SiC Sublimation Growth by the In-Situ X-Ray Topography Kato, T., Oyanagi, N., Yamaguchi, H., Nishizawa, S., Arai, K. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12