Molecular Beam Epitaxial Growth of Heteropolytypic and Low-Dimensional Structures of SiC
- Author(s):
Fissel, A. Kaiser, U. Schroter, B. KrauBlich, J. Hobert, H. Richter, W. - Publication title:
- Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999
- Title of ser.:
- Materials science forum
- Ser. no.:
- 338-342(1)
- Pub. Year:
- 2000
- Page(from):
- 205
- Page(to):
- 208
- Pages:
- 4
- Pub. info.:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878498543 [0878498540]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
Trans Tech Publications |
2
Conference Proceedings
Interplay of Surface Structure, Bond Stacking and Heteropolytypic Growth of SiC
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
4
Conference Proceedings
Epitaxial Growth and Properties of SiC Layers Grown on α-SiC(0001) by Solid-Source MBE: A Photoluminescence Study
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
12
Conference Proceedings
Epitaxial Growth of AlN on 6H-SiC (1120) by Molecular-Beam Epitaxy and Effect of Low-Temperature Buffer Layer
Materials Research Society |