Multi-Wafer VPE Growth and Characterization of SiC Epitaxial Layers

Multi-Wafer VPE Growth and Characterization of SiC Epitaxial Layers

Author(s):

Publication title:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

Title of ser.:

Materials science forum

Ser. no.:

338-342(1)

Pub. Year:

2000

Page(from):

173

Page(to):

176

Pages:

4

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00014226
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials : ICSCRM
Conf. info. (Number):	1999
Conf. info. (Venue):	Research Triangle Park, North Carolina, USA
Conf. info. (Date):	1999.10.10-1999.10.15

Similar Items:

1 Conference Proceedings Multi-wafer VPE growth of highly uniform SiC epitaxial layers O'Loughlin, M. J., Nordby, H. D. Jr., Burk, A. A. Jr. MRS-Materials Research Society	7 Conference Proceedings SiC Warm-Wall Planetary VP E Growth on Multiple 100-mm Diameter Wafers Burk, A.A., O'Loughlin, M.J., Paisley, M.J., Powell, A.R., Brady, M.F, Leonard, R.T., McClure, D.A. Trans Tech Publications
2 Conference Proceedings SiC Epitaxial Layer Growth in a Novel Multi-Wafer VPE Reactor ,A.A.Burk,Jr., O'Loughlin,M.J., Mani,S.S. Trans Tech Publications	8 Conference Proceedings Advances in 3x150 mm Hot-Wall and 6x150 mm Warm-Wall SiC Epitaxy for 10kV-Class Power Devices M. O'Loughlin, A. Burk Jr., D. Tsvetkov, S. Ustin, J.W. Palmour Trans Tech Publications
3 Conference Proceedings Large Area SiC Epitaxial Layer Growth in a Warm-Wall Planetary VPE Reactor Burk, A. A., O'Loughlin, M. J., Paisley, M. J., Powell, A. R., Brady, M. F., Leonard, R. T., Muller, S. G., Allen, S. T. Trans Tech Publications	9 Conference Proceedings Correlation of Extended Defects on Carrier Lifetime in Thick SiC Epilayers N.A. Mahadik, R.E. Stahlbush, J.D. Caldwell, M.J. O'Loughlin, A.A. Burk Trans Tech Publications
4 Conference Proceedings SiC Epitaxial Layer Growth in a 6x150 mm Warm-Wall Planetary Reactor A.A. Burk, D. Tsvetkov, D. Barnhardt, M.J. O'Loughlin, L. Garrett Trans Tech Publications	10 Conference Proceedings High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs L. Cheng, S.H. Ryu, A.K. Agarwal, M.J. O'Loughlin, A.A. Burk Trans Tech Publications
5 Conference Proceedings Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6×150 mm Warm-Wall Planetary Reactor A.A. Burk, D. Tsvetkov, M.J. O'Loughlin, S. Ustin, L. Garrett Trans Tech Publications	11 Conference Proceedings Improvement of Minority Carrier Lifetime in Thick 4H-SiC Epi-layers by Multiple Thermal Oxidations and Anneals Lin Cheng, Michael J. O'Loughlin, Alexander V. Suvorov, Edward R. Van Brunt, Albert A. Burk Materials Research Society
6 Conference Proceedings SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices A.A. Burk, M.J. O'Loughlin, J.J. Sumakeris, C. Hallin, E. Berkman Trans Tech Publications	12 Conference Proceedings Silicon Carbide Hot-Wall Epitaxy for Large-Area, High-Voltage Devices M. J. O'Loughlin, K. G. Irvine, J. J. Sumakeris, M. H. Armentrout, B. A. Hull, C. Hallin, A. A. Burk Jr. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12