TEM Study Of High Quality GaN Grown By OMVPE Using An Intermediate Layer
- Author(s):
Benamara, Mourad Liliental-Weber, Z. Kellermann, S. Swider, W. Washburn, J. Mazur, J.H. Bourret-Courchesne, E.D. - Publication title:
- Wide-bandgap electronic devices
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 622
- Pub. Year:
- 2001
- Page(from):
- T6.14
- Pub. info.:
- Warrendale, PA.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558995307 [1558995307]
- Language:
- English
- Call no.:
- M23500/622
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
The role of the multi buffer layer technique on the structural quality of GaN
MRS-Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
8
Conference Proceedings
TEM/HREM Analysis of Defects in GaN Epitaxial Layers Grown by MOVPE on SiC and Sapphire
MRS - Materials Research Society |
MRS-Materials Research Society |
North-Holland |
4
Conference Proceedings
Effect of the doping and the Al content on the microstructure and morphology of thin Alx Ga1-xN layers grown by MOCVD
MRS-Materials Research Society |
10
Conference Proceedings
Screw Dislocations in MBE GaN Layers Grown on Top of HVPE Layers: Are They Different?
Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
MRS-Materials Research Society |
12
Conference Proceedings
TEM Structure Characterization of Ti/Al and Ti/Al/Ni/Au Ohmic Contacts for n-GaN
MRS - Materials Research Society |