Hall Effect Measurements At Low Temperature Of Arsenic Implanted Into 4H-Silicon Carbide | 東京工業大学附属図書館文献データベース

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Hall Effect Measurements At Low Temperature Of Arsenic Implanted Into 4H-Silicon Carbide

Author(s):

Publication title:

Wide-bandgap electronic devices

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

622

Pub. Year:

2001

Page(from):

T6.7

Pub. info.:

Warrendale, PA.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995307 [1558995307]

Language:

English

Call no.:

M23500/622

Type:

Conference Proceedings

Details

TDL ID:	ZA00014208
Series ID:	PA00000011
Conf. info. (Name):	Sympsoium on Wide-Bandgap Electronic Devices ; MRS Spring Meeting
Conf. info. (Number):	2000
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2000.04.24-2000.04.27

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