Characterization Of Thin GaN Layers Deposited By Hydride Vapor Phase Epitaxy (HVPE) On 6H-SiC Substrates
- Author(s):
- Publication title:
- Wide-bandgap electronic devices
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 622
- Pub. Year:
- 2001
- Page(from):
- T5.7
- Pub. info.:
- Warrendale, PA.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558995307 [1558995307]
- Language:
- English
- Call no.:
- M23500/622
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Preliminary Characterization of GaN MBE Epitaxial Layers Grown on Nanoporous 6H-SiC Substrates
Materials Research Society |
MRS-Materials Research Society |
2
Conference Proceedings
GaN Grown by Hydride - Metal Organic Vapor Phase Epitaxy (H-MOVPE) on Lattice-Matched Oxide and Silicon Substrates
Trans Tech Publications |
8
Conference Proceedings
A thick GaN growth using GaN/Si(111) template by hydride vapor phase epitaxy (HVPE)
Society of Photo-optical Instrumentation Engineers |
3
Conference Proceedings
GaN Grown by Hydride - Metal Organic Vapor Phase Epitaxy (H-MOVPE) on Lattice-Matched Oxide and Silicon Substrates
Trans Tech Publications |
9
Conference Proceedings
Structural Characterization of SiC Epitaxial Layers Grown on Porous SiC Substrates
Materials Research Society |
MRS - Materials Research Society |
Trans Tech Publications |
MRS - Materials Research Society |
MRS - Materials Research Society |
Trans Tech Publications |
Materials Research Society |