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Lateral And Vertical Growth Study In The Initial Stages Of GaN Growth On Sapphire With ZnO Buffer Layers By Hydride Vapor Phase Epitaxy

Author(s):
Publication title:
Wide-bandgap electronic devices
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
622
Pub. Year:
2001
Page(from):
T4.9
Pub. info.:
Warrendale, PA.: Materials Research Society
ISSN:
02729172
ISBN:
9781558995307 [1558995307]
Language:
English
Call no.:
M23500/622
Type:
Conference Proceedings

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