Non-Contact Characterization Of Recombination Processes In 4H-SiC
- Author(s):
- Publication title:
- Wide-bandgap electronic devices
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 622
- Pub. Year:
- 2001
- Page(from):
- T4.4
- Pub. info.:
- Warrendale, PA.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558995307 [1558995307]
- Language:
- English
- Call no.:
- M23500/622
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
8
Conference Proceedings
Hysteresis in Transfer Characteristics in 4H-SiC Depletion/Accumulation-Mode MOSFETs
Trans Tech Publications |
3
Conference Proceedings
Gallium Nitride Metal-Insulator-Semiconductor Capacitors Using Low-Pressure Chemical Vapor Deposited Oxides
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
11
Conference Proceedings
Hysteresis in Transfer Characteristics in 4H-SiC Depletion/Accumulation-Mode MOSFETs
Trans Tech Publications |
6
Conference Proceedings
Voltage Handling Capabilhy and Microwave Performance of a 4H-SiC MESFET-A Simulation Study
Trans Tech Publications |
Trans Tech Publications |