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GaN pnp Bipolar Junction Transistors Operated To 250℃

Author(s):
Zhang, A.P.
Dang, G.
Ren, F.
Han, J.
Monier, C.
Baca, A.G.
Cao, X.A.
Cho, H.
Abernathy, C.R.
Pearton, S.J.
5 more
Publication title:
Wide-bandgap electronic devices
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
622
Pub. date:
2001
Page(from):
T3.2
Pub. info.:
Warrendale, PA.: Materials Research Society
ISSN:
02729172
ISBN:
9781558995307 [1558995307]
Language:
English
Call no.:
M23500/622
Type:
Conference Proceedings

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