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Fabrication Of Enhancement-Mode GaN-Based Metal-Insulator-Semiconductor Field Effect Transistor

Author(s):
Chen, P.
Zhang, R.
Zhou, Y.G.
Xie, S.Y.
Luo, Z.Y.
Chen, Z.Z.
Li, W.P.
Gu, S.L.
Zheng, Y.D.
4 more
Publication title:
Wide-bandgap electronic devices
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
622
Pub. Year:
2001
Page(from):
T2.9
Pub. info.:
Warrendale, PA.: Materials Research Society
ISSN:
02729172
ISBN:
9781558995307 [1558995307]
Language:
English
Call no.:
M23500/622
Type:
Conference Proceedings

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