Blank Cover Image

Boron Activation During Solid Phase Epitaxial Regrowth

Author(s):
Publication title:
Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
610
Pub. Year:
2001
Page(from):
B10.2
Pub. info.:
Warrendale, PA: Materials Research Society
ISSN:
02729172
ISBN:
9781558995185 [1558995188]
Language:
English
Call no.:
M23500/610
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Boron Solubility Limits Following Low Temperature Solid Phase Epitaxial Regrowth

Lindfors, C.D., Jones, K.S., Rendon, M.J.

Materials Research Society
7 Conference Proceedings Exploring Alternative Annealing Methods for Shallow Junction Formation in Ion Implanted Silicon

Jones, K.S., Banisaukis, H., Earles, S., Lindfors, C., Griglione, M., Law, M.E., Taiwar, S., Falk, S.W., Downey, D.F., …

Electrochemical Society
2 Conference Proceedings Study of Vacancy and Impurity Complexes in Si Solid-Phase Epitaxial Crystallization with Positron Annihilation Spectroscopy

Lindfors, C.D., Jones, K.S., Law, M.E., Downey, D.F., Murto, R.W.

Materials Research Society
8 Conference Proceedings Enhanced Boron Diffusion in Amorphous Silicon

Jacques, J.M., Burbure, N., Jones, K.S., Law, M.E., Robertson, L.S., Downey, D.F., Rubin, L.M., Bennett, J., Beebe, M., …

Materials Research Society
3 Conference Proceedings A Physically Based Modeling Of Boron TED In Amorphized Si

Earles, S.K., Law, Mark E., Jones, K.S., Brindos, Rich, Talwar, Somit

Materials Research Society
9 Conference Proceedings Junction Depth Reduction Of Ion Implanted Boron In Silicon Through Fluorine Ion Implantation

Robertson, L. S., Warnes, P. N., Jones, K. S., Earles, S. K., Law, M. E., Downey, D. F., Falk, S., Liu, J.

Materials Research Society
4 Conference Proceedings The Effect Of Impurities On Diffusion And Activation Of Ion Implanted Boron In Silicon

Robertson, L.S., Brindos, R., Jones, K. S., Law, Mark E., Downey, D. F., Falk, S., Liu, J.

Materials Research Society
10 Conference Proceedings SOLID PHASE EPITAXIAL REGROWTH OF IMPLANTATION AMORPHIZED Si0.7Ge0.3 GROWN ON (100) SILICON

Lee, C., Jones, K. S.

Materials Research Society
5 Conference Proceedings Solid Phase Epitaxy- Activation and Deactivation of Boron in Ultra-Shallow Junctions

Lerch, W., Paul, S., Niess, J., Crisliano, F., Lamrani, Y., Colvo, P., Cherkashin, N., Downey, D.F., Arevalo, E.A.

Electrochemical Society
11 Conference Proceedings Onset of Extended Defect Formation and Enhanced Diffusion for Ultra-Low Energy Boron Implants

Liu, J., Jones, K. S., Downey, D. F., Mehta, S.

MRS - Materials Research Society
6 Conference Proceedings TIME-RESOLVED REFLECTIVITY STUDY OF SOLID-PHASE EPITAXIAL REGROWTH IN RELAXED AND STRAINED Si1-X GeX EPILAYERS

Haynes, T.E., Lee, C., Jones, K.S.

Materials Research Society
12 Conference Proceedings The Effects of Rapid Recrystallization and Ion Implanted Carbon on the Solid Phase Epitaxial Regrowth of Si1-xGex Alloy Layers on Silicon

Antonell, M. J., Haynes, T. E., Jones, K. S.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12