Junction Depth Reduction Of Ion Implanted Boron In Silicon Through Fluorine Ion Implantation
- Author(s):
Robertson, L. S. Warnes, P. N. Jones, K. S. Earles, S. K. Law, M. E. Downey, D. F. Falk, S. Liu, J. - Publication title:
- Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 610
- Pub. Year:
- 2001
- Page(from):
- B4.2
- Pub. info.:
- Warrendale, PA: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558995185 [1558995188]
- Language:
- English
- Call no.:
- M23500/610
- Type:
- Conference Proceedings
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