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Junction Depth Reduction Of Ion Implanted Boron In Silicon Through Fluorine Ion Implantation

Author(s):
Robertson, L. S.
Warnes, P. N.
Jones, K. S.
Earles, S. K.
Law, M. E.
Downey, D. F.
Falk, S.
Liu, J.
3 more
Publication title:
Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
610
Pub. Year:
2001
Page(from):
B4.2
Pub. info.:
Warrendale, PA: Materials Research Society
ISSN:
02729172
ISBN:
9781558995185 [1558995188]
Language:
English
Call no.:
M23500/610
Type:
Conference Proceedings

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