Low Temperature Selective Si Epitaxy By Reduced Pressure Chemical Vapor Deposition Introducing Periodic Deposition And Etching Cycles With SiH4, H2 And HC1

Low Temperature Selective Si Epitaxy By Reduced Pressure Chemical Vapor Deposition Introducing Periodic Deposition And Etching Cycles With SiH4, H2 And HC1

Author(s):

Publication title:

Amorphous and heterogeneous silicon thin films - 2000 : symposium held April 24-28, 2000, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

609

Pub. Year:

2001

Page(from):

A8.2

Pub. info.:

Warrendale: Materials Research Society

ISSN:

02729172

ISBN:

9781558995178 [155899517X]

Language:

English

Call no.:

M23500/609

Type:

Conference Proceedings

Details

TDL ID:	ZA00014197
Series ID:	PA00000011
Conf. info. (Name):	Symposium on amorphous and heterogeneous silicon thin films
Conf. info. (Number):	2000
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2000.04.24-2000.04.28

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