Blank Cover Image

THE INFLUENCE OF CARBON ON THE EFFECTIVE DIFFUSIVITIES OF INTRINSIC POINT DEFECTS IN SILICON

Author(s):
Publication title:
State-of-the-art program on compound semiconductors XL (SOTAPOCS XL) and narrow bandgap optoelectronic materials and devices II : proceedings of the international symposia
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
96-4
Pub. date:
2004
Page(from):
309
Page(to):
323
Pages:
15
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566770644 [1566770645]
Language:
English
Call no.:
E23400/200402
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings The Influence of Carbon on the Effective Diffusivities of Intrinsic Point Defects in Silicon

Goesele, U., Ploessl, A., Tan, T.Y.

Electrochemical Society
7 Conference Proceedings Non-Equilibrium Point Defects and Diffusion in GaAs and Related Compounds

Gosele,U., Tan,T.Y., Uematsu,M., Wada,K.

Trans Tech Publications
2 Conference Proceedings THE ROLE OF CARBON AND POINT DEFECTS IN SILICON

Gosele, U.

Materials Research Society
8 Conference Proceedings THERMAL DONOR FORMATION BY THE AGGLOMERATION OF OXYGEN IN SILICON

Gosele, U., Tan,. T. Y.

North-Holland
3 Conference Proceedings Intrinsic Point Defects and Diffusion Processes in Silicon

Tan, T. Y.

North-Holland
9 Conference Proceedings Phosphorus and Aluminum Gettering of Gold in Silicon: Simulation and Optimization Considerations

Gafiteanu, R., Gosele, U., Tan, T. Y.

MRS - Materials Research Society
4 Conference Proceedings *THE NATURE OF POIND DEFECTS AND THEIR INFLUENCE ON DIFFUSION PROCESSES IN SILICON AT HIGH TEMPERATURE,

Gosele, U.

North-Holland
10 Conference Proceedings Dislocation nucleation models from point defect condensations in silicon and germanium

Tan, T.Y.

North Holland
5 Conference Proceedings Point Defects, Diffusion, and Gettering in Silicon

Gosele, U., Conrad, D., Werner, P., Tong, Q-Y., Gafiteanu, R., Tan, T. Y.

MRS - Materials Research Society
11 Conference Proceedings INVITED: THERMOPHYSICAL PROPERTIES OF INTRINSIC POINT DEFECTS IN CRYSTALLINE SILICON

Sinno, T.

Electrochemical Society
6 Conference Proceedings THE INFLUENCE OF POINT DEFECTS ON DIFFUSION AND GETTERING IN SILICON

Goselle, U., Tan, T. Y.

Materials Research Society
12 Conference Proceedings INVITED: THERMOPHYSICAL PROPERTIES OF INTRINSIC POINT DEFECTS IN CRYSTALLINE SILICON

Sinno, T.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12