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MODELS AND PARAMETERS FOR THE COUPLED DIFFUSION OF DOPANTS AND POINT DEFECTS IN SILICON

Author(s):
Publication title:
State-of-the-art program on compound semiconductors XL (SOTAPOCS XL) and narrow bandgap optoelectronic materials and devices II : proceedings of the international symposia
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
96-4
Pub. date:
2004
Page(from):
27
Page(to):
36
Pages:
10
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566770644 [1566770645]
Language:
English
Call no.:
E23400/200402
Type:
Conference Proceedings

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