Silicon Nitride Passivation for InP Based Devices
- Author(s):
Ren, F. Buckley, N. Lee, K. Pearton, S.J. Bartynski, R.A. Constantine, C. Hobson, W.S. Chao, P.C. - Publication title:
- Proceedings of the Twenty-first State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXI)
- Title of ser.:
- Electrochemical Society Proceedings Series
- Ser. no.:
- 1994-34
- Pub. Year:
- 1994
- Page(from):
- 187
- Page(to):
- 196
- Pages:
- 10
- Pub. info.:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566770934 [1566770939]
- Language:
- English
- Call no.:
- E23400/950719
- Type:
- Conference Proceedings
Similar Items:
Materials Research Society |
7
Conference Proceedings
OPTICAL EMISSION END-POINT DETECTION FOR VIA HOLE ETCHING IN InP AND GaAs POWER DEVICE STRUCTURES
MRS - Materials Research Society |
Materials Research Society |
8
Conference Proceedings
Development of low temperature silicon nitride and silicon dioxide films by inductively-coupled plasma chemical vapor deposition
Materials Research Society |
Electrochemical Society |
9
Conference Proceedings
REACTIVE ION ETCHING OF In-BASED III-V SEMICONDUCTORS COMPARISON OF Cl AND C2H6 CHEMISTRIES
Materials Research Society |
MRS - Materials Research Society |
10
Conference Proceedings
Hydrogenation and Defect Creation in GaAs-Based Devices During High-Density Plasma Processing
MRS - Materials Research Society |
Materials Research Society |
11
Conference Proceedings
Comparison of ICI and IBr Plasma Chemistries for Etching of InGaAlP Alloys
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |