Blank Cover Image

Silicon Nitride Passivation for InP Based Devices

Author(s):
Ren, F.
Buckley, N.
Lee, K.
Pearton, S.J.
Bartynski, R.A.
Constantine, C.
Hobson, W.S.
Chao, P.C.
3 more
Publication title:
Proceedings of the Twenty-first State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXI)
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
1994-34
Pub. Year:
1994
Page(from):
187
Page(to):
196
Pages:
10
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566770934 [1566770939]
Language:
English
Call no.:
E23400/950719
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings IODINE-BASED DRY ETCHING CHEMISTRIES FOR InP AND RELATED COMPOUNDS

Pearton, S.J., Chakrabarti, U.K., Katz, A., Abernathy, C.R., Hobson, W.S., Ren, F., Fullowan, T.R.

Materials Research Society
7 Conference Proceedings OPTICAL EMISSION END-POINT DETECTION FOR VIA HOLE ETCHING IN InP AND GaAs POWER DEVICE STRUCTURES

Pearton, S. J., Ren, F., Abernathy, C. R., Constantine, C.

MRS - Materials Research Society
2 Conference Proceedings HYDROGEN PASSIVATION OF INTERFACIAL DEFECTS IN MOCVD GROWN GaAs/InP

Swaminathan, V., Chakrabarti, U.K., Hobson, W.S., Caruso, R., Lopata, J., Pearton, S.J.

Materials Research Society
8 Conference Proceedings Development of low temperature silicon nitride and silicon dioxide films by inductively-coupled plasma chemical vapor deposition

Lee, J.W., Mackenzie, K.D., Johnson, D., Pearton, S.J., Ren, F., Sasserath, J.N.

Materials Research Society
3 Conference Proceedings High Performance Small Area Contact GaN/AlGaN HBTs

Lee, K.P., Zhang, A.P., Ren, F., Han, J., Hobson, W.S., Pearton, S.J.

Electrochemical Society
9 Conference Proceedings REACTIVE ION ETCHING OF In-BASED III-V SEMICONDUCTORS COMPARISON OF Cl AND C2H6 CHEMISTRIES

Pearton, S.J., Chakrabarti, U.K., Baiocchi, F.A., Hobson, W.S.

Materials Research Society
4 Conference Proceedings NEW DRY-ETCH CHEMISTRIES FOR III-V SEMICONDUCTORS

Pearton, S. J., Chakrabarti, U. K., Ren, F., Abernathy, C. R., Katz, A., Hobson, W. S., Constantine, C.

MRS - Materials Research Society
10 Conference Proceedings Hydrogenation and Defect Creation in GaAs-Based Devices During High-Density Plasma Processing

Maeda, T., Lee, J. W., Abernathy, C. R., Pearton, S. J., Ren, F., Constantine, C., Shul, R. J.

MRS - Materials Research Society
5 Conference Proceedings Self-Aligned Process For Emitter- And Base- Regrowth GaN HBTs And BJTs

Lee, K.P., Zhang, A. P., Dang, G., Ren, F., Han, J., Chu, S. N. G., Hobson, W. S., Lopata, J., Abernathy, C. R., …

Materials Research Society
11 Conference Proceedings Comparison of ICI and IBr Plasma Chemistries for Etching of InGaAlP Alloys

Hong, J., Lee, J.W, Lambers, E.S., Abernathy, C.R, Pearton, S.J., Constantine, C., Hobson, W.S.

Electrochemical Society
6 Conference Proceedings Wet and Dry Etch Selectivity For the GaAs/AlGaAs and GaAs/InGaP Systems

Hays, D., Abernathy, C.R., Pearton, S.J., Ren, F., Hobson, W.S.

Electrochemical Society
12 Conference Proceedings High Microwave Power ECR Etching of III-V Semiconductors in CH4/H2/Ar

Lee, J.W., Pearton, S.J., Lambers, E.S., Mileham, J.R., Abernathy, C.R., Hobson, W.S., Ren, F., Shul, R.J.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12