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Epitaxial Growth of InGaAs by LP-MOCVD Under Highly Stable Reaction Chamber Conditions

Author(s):
Publication title:
Proceedings of the Twenty-first State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXI)
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
1994-34
Pub. Year:
1994
Page(from):
50
Page(to):
59
Pages:
10
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566770934 [1566770939]
Language:
English
Call no.:
E23400/950719
Type:
Conference Proceedings

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