Blank Cover Image

The Physics of Normal Incidence Absorption in P-Type GaAs/AlGaAs Quantum Well Infrared Detectors

Author(s):
Publication title:
Proceedings of the Second International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
1994-30
Pub. Year:
1994
Page(from):
164
Page(to):
178
Pages:
15
Pub. info.:
Pennington, NJ.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566770897 [1566770890]
Language:
English
Call no.:
E23400/950716
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Modeling of normal incidence absorption in p-type GaAs/AlGaAs quantum well infrared detectors

G.J. Brown, F. Szmulowicz

Society of Photo-optical Instrumentation Engineers
7 Conference Proceedings *Temperature dependence of photoresponse in p-type GaAs/AlGaAs multiple quantum wells: Theory and experiment

Szmulowicz, F., Shen, A., Liu, H. C., Brown, G. J., Wasilewski, Z. R., Buchanan, M.

MRS-Materials Research Society
2 Conference Proceedings GaAs/AlGaAs p-type multiple quantum wells for infrared detection at normal incidence: model and experiment

Szmulowicz,F., Brown,G.J., Liu,H.C., Shen,A., Wasilewski,Z.R., Buchanan,M.

SPIE-The International Society for Optical Engineering
8 Conference Proceedings Whither P type GaAs/AlGaAs QWIP? (Invited Paper)

Szmulowicz, F., Brown, G.J.

SPIE-The International Society for Optical Engineering
3 Conference Proceedings Toward the Design of Optimized GaAs/AIGaAs P-Type Multiple-Quantum Wells for Infrared Detection at Normal Incidence: Model and Experiment

Szmulowicz, F., Liu, H.C., Brown, G.J., Wasilewski, Z.R., Buchanan, M.

Electrochemical Society
9 Conference Proceedings A Normal Incidence Two-Color P-Type Compressive Strained-Layer InGaAs/GaAs Quantum Well Infrared Photodetector

Wang, Y.H., Chu, J., Li, Sheng S., Ho, Pin

Electrochemical Society
4 Conference Proceedings Characterization and Modeling of GaAs/AlGaAs P-Type Multi-Quantum Wells for Infared Detection at Normal Incidence

Brown, G.J., Taferner, W.T., Hedge, S.M., Eyink, K.G., Szmulowicz, F., Mitchel, W.C., Solomon, J., Walck, S.D.

Electrochemical Society
10 Conference Proceedings Normal Incidence N-Type Direct Gap Quantum Well Infrared Photodetector

Tidrow, M.Z., Jiang, Xudong, Chiang, J.C., Li, Sheng S., Kennerly, S.W.

Electrochemical Society
5 Conference Proceedings Normal Incidence Photoresponse as a Function of Well Width in p-Type GaAs/AlGaAs Multiquantum Wells

Brown, G. J., Capano, M. A., Hegde, S. M., Eyink, K., Szmulowicz, F.

MRS - Materials Research Society
11 Conference Proceedings Novel photovoltaic and bicolor GaAs/AlGaAs quantum well infrared detector

Chen,Z., Yuan,Z., Ma,J., Cui,D.

SPIE-The International Society for Optical Engineering
6 Conference Proceedings The Influence of GaSb Layer Thickness on the Band Gap of InAs/GaSb Type-II Superlattices for Mid-Infrared Detection

Haugan, Heather J., Szmulowicz, Frank, Brown, Gail J.

Materials Research Society
12 Conference Proceedings Coupling efficiency of metal gratings in a normal incident GaAs/AlGaAs quantum well infrared detector

Yang,Y., Xia,G., Zou,S., Wang,X.

SPIE-The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12