Blank Cover Image

A Monitor for Polysilicon Etch Damage at Gate Periphery

Author(s):
Publication title:
Proceedings of the tenth symposium on plasma processing
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
1994-20
Pub. Year:
1994
Page(from):
173
Page(to):
180
Pages:
8
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566770774 [1566770777]
Language:
English
Call no.:
E23400/941901
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Scatterometry measurements for process monitoring of polysilicon gate etch

Bushman,S., Farrer,S.

SPIE-The International Society for Optical Engineering
7 Conference Proceedings CD control of ASIC polysilicon gate level

Tyminski,J.K., McNamara,S.J., Meisner,S.A., Gorham,R.R.

SPIE-The International Society for Optical Engineering
2 Conference Proceedings Scatterometry for post-etch polysilicon gate metrology

Christopher C. Baum, Robert A. Soper, Stephen W. Farrer, J. L. Shohet

SPIE - The International Society of Optical Engineering
8 Conference Proceedings Etch Induced Gate Oxide Degradation in an Electron Cyclotron Resonance Plasma Etcher

Lee, S.H., Lee, D-D., Kim, J-H., Shin, K-S., Park, H-S., Choi, H-S.

Electrochemical Society
3 Conference Proceedings Development of a Polysilicon Gate Etch Process for 0.12 um Geometries

Manders, B.S., de Laat, W.T., van Autryve, L.R.

Electrochemical Society
9 Conference Proceedings PHOTOREFLECTANCE CHARACTERIZATION OF ETCH-INDUCED DAMAGE IN DRY ETCHED GaAs

Glembocki, O. J., Tuchman, J. A., Ko, K. K., Pang, S. W., Giordana, A., Stutz, C. E.

MRS - Materials Research Society
4 Conference Proceedings Characterization of Polysilicon Gate Etch with Ultra Thin Gate Oxide (<35 A゜) in a Decoupled Plasma Source Etcher

Lii, T., Park, E., Lutz, J., Wu, W., Simpson, L., Mui, D.

Electrochemical Society
10 Conference Proceedings DRY ETCH DAMAGE IN GaAs P-N JUNCTIONS

Pearton, S. J., Abernathy, C. R.

Materials Research Society
5 Conference Proceedings Damage Resulting from Polysilicon Gate Etching: Effect of Electrode Age and Sequencing within a Cassette

Mikulan, P.I., Awadelkarim, O.O., Fonash, S.J., Reinhardt, K.A., Rembetski, J.F.

Electrochemical Society
11 Conference Proceedings Dry Etch Damage in InN, InGaN and InAlN

Pearton, S. J., Lee, J. W., MacKenzie, J. D., Vartuli, C. B., Donovan, S. M., Abernathy, C. R., Shul, R. J., Ren, F., …

MRS - Materials Research Society
6 Conference Proceedings Characterization of Polysilicon Thin-Film Transistor Gate Dielectrics

Zaman, R.J., Damiano, J., Jr., Batra, S., Manning, M., Banerjee, S.K.

Electrochemical Society
12 Conference Proceedings INFLUENCE OF POLYSILICON PROCESSING ON THE QUALITY OF THIN RTP/FURNACE GATE OXIDES

Haase, J., Ferretti, R., Prasad, S.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12