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The Mechanical Properties of NiAl Grown on GaAs by Molecular Beam Epitaxy

Author(s):
Publication title:
Proceedings of the Symposium on Large Area Wafer Growth and Processing for Electronic and Photonic Devices and the twentieth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XX)
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
1994-18
Pub. Year:
1994
Page(from):
203
Page(to):
212
Pages:
10
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566770750 [1566770750]
Language:
English
Call no.:
E23400/950354
Type:
Conference Proceedings

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