Group V Composition Control for InGaAsP Grown by Gas-Source Molecular Beam Epitaxy

Group V Composition Control for InGaAsP Grown by Gas-Source Molecular Beam Epitaxy

Author(s):

Publication title:

Proceedings of the Symposium on Large Area Wafer Growth and Processing for Electronic and Photonic Devices and the twentieth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XX)

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

1994-18

Pub. Year:

1994

Page(from):

31

Page(to):

38

Pages:

8

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770750 [1566770750]

Language:

English

Call no.:

E23400/950354

Type:

Conference Proceedings

Details

TDL ID:	ZA00014127
Series ID:	PA00000028
Conf. info. (Name):	Symposium on Large Area Wafer Growth and Processing for Electronic and Photonic Devices ; State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; Meeting of the Electrochemical Society
Conf. info. (Number):	1994 ; 20th ; 185th
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1994.05.22-1994.05.27

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