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Gate Material Effect On Charge To Breakdown In P-Type Si MOS Structure

Author(s):
Gao, X.  
Publication title:
Proceedings of the third Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
1994-16
Pub. Year:
1994
Page(from):
170
Page(to):
179
Pages:
10
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566770484 [1566770483]
Language:
English
Call no.:
E23400/942240
Type:
Conference Proceedings

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